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this is information on a product in full production. june 2012 doc id 16825 rev 4 1/20 20 stb20n95k5, stf20n95k5 stp20n95k5, STW20N95K5 n-channel 950 v, 0.275 , 17.5 a supermesh 5? power mosfet in d2pak, to-220fp, to-220 and to-247 packages datasheet ? production data features to-220 worldwide best r ds(on) worldwide best fom (figure of merit) ultra low gate charge 100% avalanche tested zener-protected applications switching applications description these devices are n-channel power mosfets developed using supermesh? 5 technology. this revolutionary, avalanche-rugged, high voltage power mosfet technology is based on an innovative proprietary vertical structure. the result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency. figure 1. internal schematic diagram order codes v dss r ds(on) max i d p w stb20n95k5 950 v < 0.330 17.5 a 250 w stf20n95k5 40 w stp20n95k5 250 w STW20N95K5 to-220 1 2 3 tab 1 2 3 1 2 3 to-220fp to-247 1 3 tab d2pak d(2,tab) g(1) s(3) am01476v1 table 1. device summary order codes marking package packaging stb20n95k5 20n95k5 d2pak tape and reel stf20n95k5 to-220fp tube stp20n95k5 to-220 STW20N95K5 to-247 www.st.com
contents stb20n95k5, stf20n95k5, stp20n95k5, STW20N95K5 2/20 doc id 16825 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
stb20n95k5, stf20n95k5, stp20n95k5, STW20N95K5 electrical ratings doc id 16825 rev 4 3/20 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit d2pak to-220 to-247 stf20n95k5 v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 17.5 a i d drain current (continuous) at t c = 100 c 11 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 70 a p tot total dissipation at t c = 25 c 250 40 w i ar max current during repetitive or single pulse avalanche (pulse width limited by t jmax ) 6a e as single pulse avalanche energy (starting t j = 25 c, i d =i as , v dd = 50 v) 200 mj esd gate-source human body model (r= 1,5 k , c = 100 pf) 2kv v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) 2500 v dv/dt (2) 2. i sd 17.5 a, di/dt 100 a/s, v peak v (br)dss peak diode recovery voltage slope 6 v/ns t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal data symbol parameter value unit d2pak to-220 to-247 to-220fp rthj-case thermal resistance junction-case max 0.5 3.1 c/w rthj-amb thermal resistance junction-amb max 62.5 50 62.5 c/w rthj-pcb thermal resistance junction-pcb max 30 c/w
electrical characteristics stb20n95k5, stf20n95k5, stp20n95k5, STW20N95K5 4/20 doc id 16825 rev 4 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 950 v i dss zero gate voltage drain current (v gs = 0) v ds = 950 v, v ds = 950 v, tc=125 c 1 50 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 4 5 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 9 a 0.275 0.330 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds =100 v, f=1 mhz, v gs =0 - 1500 - pf c oss output capacitance 80 pf c rss reverse transfer capacitance 5pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v gs = 0, v ds = 0 to 760 v -170- pf c o(er) (2) 2. energy related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -65-pf r g intrinsic gate resistance f = 1mhz open drain - 3.5 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 760 v, i d = 9 a v gs =10 v (see figure 19 ) - 40 8 25 - nc nc nc
stb20n95k5, stf20n95k5, stp20n95k5, STW20N95K5 electrical characteristics doc id 16825 rev 4 5/20 the built-in-back zener diodes have specifically been designed to enhance not only the device?s esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s integrity. these integrated zener diodes thus avoid the usage of external components. table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 475 v, i d = 9 a, r g =4.7 , v gs =10 v (see figure 21 ) - 17 12 70 20 - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm source-drain current source-drain current (pulsed) - 17.5 70 ma a v sd (1) 1. pulsed: pulse duration = 300s, duty cycle 1.5% forward on voltage i sd = 17.5 a, v gs =0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 17.5 a, v dd = 60 v di/dt = 100 a/s, (see figure 20 ) - 530 12 44 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 17.5 a,v dd = 60 v di/dt=100 a/s, tj=150 c (see figure 20 ) - 650 14 44 ns c a table 8. gate-source zener diode symbol parameter test conditions min. typ. max. unit v (br)gso gate-source breakdown voltage igs 1ma, (i d = 0) 30 - - v
electrical characteristics stb20n95k5, stf20n95k5, stp20n95k5, STW20N95K5 6/20 doc id 16825 rev 4 2.1 electrical characteristics (curves) figure 2. safe operating area for d2pak and to-220 figure 3. thermal impedance for d2pak and to-220 figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp figure 6. safe operating area for to-247 figure 7. thermal impedance for to-247 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am111 8 2v1 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e 0.01 am111 83 v1 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e 100 am111 8 4v1
stb20n95k5, stf20n95k5, stp20n95k5, STW20N95K5 electrical characteristics doc id 16825 rev 4 7/20 figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on-resistance figure 12. capacitance variations figure 13. output capacitance stored energy i d 15 10 5 0 0 10 v d s (v) 20 (a) 5 15 25 20 25 5v 6v 7v v g s =10v 3 0 8 v am111 8 5v1 i d 15 10 5 0 0 4 v g s (v) 8 (a) 2 6 20 25 v d s =15v 10 3 0 3 5 40 am111 8 6v1 v g s 6 4 2 0 0 q g (nc) (v) 3 0 8 10 20 10 v dd =760v i d =9a 40 12 600 400 200 0 8 00 v d s q g v d s ( v) am111 8 7v1 r d s (on) 0.29 0.2 8 0.27 0.26 0 6 i d (a) ( ) 2 10 v g s =10v 14 1 8 am111 88 v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 10000 100 ci ss co ss cr ss am111 8 9v1 e o ss 1.5 1.0 0.5 0 0 100 v d s (v) ( j) 400 2.0 200 3 00 2.5 3 .0 500 3 .5 4.0 4.5 am11190v1
electrical characteristics stb20n95k5, stf20n95k5, stp20n95k5, STW20N95K5 8/20 doc id 16825 rev 4 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on-resistance vs temperature figure 16. maximum avalanche energy vs starting tj figure 17. normalized b vdss vs temperature v g s (th) 0.6 0.5 0.4 0. 3 t j (c) (norm) -25 0.7 75 25 125 0.9 0. 8 1.0 1.2 1.1 am11192v1 r d s (on) 2.0 1.5 1.0 0.5 t j (c) (norm) -25 75 25 125 2.5 0 am1119 3 v1 e a s 0 40 t j (c) (mj) 20 100 60 8 0 0 20 40 60 8 0 120 140 100 120 140 160 1 8 0 200 i d =6 a v dd =50 v am11194v1 bv d ss t j (c) (norm) -25 75 25 125 0.90 0.92 0.94 0.96 0.9 8 1.00 1.02 1.04 1.06 1.0 8 1.10 am11191v1
stb20n95k5, stf20n95k5, stp20n95k5, STW20N95K5 test circuits doc id 16825 rev 4 9/20 3 test circuits figure 18. switching times test circuit for resistive load figure 19. gate charge test circuit figure 20. test circuit for inductive load switching and diode recovery times figure 21. unclamped inductive load test circuit figure 22. unclamped inductive waveform figure 23. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data stb20n95k5, stf20n95k5, stp20n95k5, STW20N95K5 10/20 doc id 16825 rev 4 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack ? is an st trademark. table 9. d2pak (to-263) mechanical data dim. mm min. typ. max. a4.40 4.60 a1 0.03 0.23 b0.70 0.93 b2 1.14 1.70 c0.45 0.60 c2 1.23 1.36 d8.95 9.35 d1 7.50 e 10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
stb20n95k5, stf20n95k5, stp20n95k5, STW20N95K5 package mechanical data doc id 16825 rev 4 11/20 figure 24. d2pak (to-263) drawing figure 25. d2pak footprint (a) a. all dimensions are in millimeters 0079457_ s 16.90 12.20 9.75 3 .50 5.0 8 1.60 footprint
package mechanical data stb20n95k5, stf20n95k5, stp20n95k5, STW20N95K5 12/20 doc id 16825 rev 4 figure 26. to-220fp drawing table 10. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2 7012510_rev_k a b h di a l7 d e l6 l5 l2 l 3 l4 f1 f2 f g g1
stb20n95k5, stf20n95k5, stp20n95k5, STW20N95K5 package mechanical data doc id 16825 rev 4 13/20 table 11. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
package mechanical data stb20n95k5, stf20n95k5, stp20n95k5, STW20N95K5 14/20 doc id 16825 rev 4 figure 27. to-220 type a drawing 00159 88 _typea_rev_ s
stb20n95k5, stf20n95k5, stp20n95k5, STW20N95K5 package mechanical data doc id 16825 rev 4 15/20 table 12. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
package mechanical data stb20n95k5, stf20n95k5, stp20n95k5, STW20N95K5 16/20 doc id 16825 rev 4 figure 28. to-247 drawing 0075 3 25_g
stb20n95k5, stf20n95k5, stp20n95k5, STW20N95K5 packaging mechanical data doc id 16825 rev 4 17/20 5 packaging mechanical data table 13. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3
packaging mechanical data stb20n95k5, stf20n95k5, stp20n95k5, STW20N95K5 18/20 doc id 16825 rev 4 figure 29. tape figure 30. reel p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us top cover t a pe am0 88 52v2 a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
stb20n95k5, stf20n95k5, stp20n95k5, STW20N95K5 revision history doc id 16825 rev 4 19/20 6 revision history table 14. document revision history date revision changes 25-nov-2009 1 first release. 12-jan-2010 2 corrected v gs value in table 2: absolute maximum ratings . 22-dec-2011 3 inserted device in d 2 pak. document status promoted from preliminary data to datasheet. added: section 2.1: electrical characteristics (curves) updated section 4: package mechanical data . added section 5: packaging mechanical data . minor text changes. 06-jun-2012 4 figure 9: transfer characteristics has been updated.
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